v oltage: 40 to 60 v olts current: 1.0 amp rohs device page 1 rev :c CDBFN140-HF thru cdbfn160-hf d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) qw -jb001 sod-323 smd schottky barrier rectifiers comchip t echnology co., l td. note 1: f=1mhz and applied 4v dc reverse voltage. features - batch process design, excellent power mechanical data -w eight:0.008 gram(approx.). dissipation of fers better reverse leakage current. -low profile surface mounted application in order to optimize board space. -low power loss, high ef ficiency . -high current capability , low forward voltage dorp. -high surge capability . -guardring for overvoltage protection. -v ery tiny plastic smd package. -ultra high-speed switching. -silicon epitaxial planar chip, metal silicon junction. -lead-free parts meet environmental standards of mil-std-19500 /228 -case: jedec sod-323 , molded plastic -t erminals: solde plated, solderable per mil-std-750, method 2026. -polarity: indicated by cathode band. -mounting position: any maximum ratings (at t a=25c unless otherwise noted) 0.012(0.3) t yp. 0.016(0.4) t yp. 0.016(0.4) t yp. 0.106 (2.70) 0.091 (2.30) 0.057 (1.45) 0.041 (1.05) 0.047 (1.2) 0.031 (0.8) halogen free pa ra m et er sy m bo l un it repetitive peak reverse voltage maximum rms voltage continuous reverse voltage maximum forward voltage @i f =1.0a forward rectified current forward surge current, 8.3ms half sine wave superimposed on rated load (jedec method) t yp. thermal resistance, junction to ambient air t yp. diode junction capacitance (note 1) operating junction temperature storage temperature v rrm v rms v r v f i o i fsm i r r ja c j t j t stg 1.0 30 0.5 10 90 120 -55 to +125 -55 to +150 v v v v a a ma c/w pf c c -65 to +150 40 28 40 60 42 60 0.55 0.70 cdbfn 160-hf cdbfn 140-hf reverse current on v r =v rrm @t a =25 o c @t a =100 o c
ratings and characteristic curves(CDBFN140-HF thru cdbfn160-hf) page 2 qw -jb001 comchip t echnology co., l td. smd schottky barrier rectifiers rev :c fig.1- t ypical forward current derating curve i o , a v e r a g e d f o r w a r d c u r r e n t , ( a ) t a , ambient t emperature, (c) 0 1 0 0 fig.3- maximum non-repetitive peak forward surge current number of cycles at 60hz 0 1 . 0 1 . 3 1 5 0 5 0 2 0 0 0 . 5 0 i f s m , p e a k f o r w a r d s u r g e c u r r e n t , ( a ) 3 0 1 1 0 0 1 8 1 0 6 1 2 2 4 o t j =25 c 8.3ms single half sine wave, jedec method fig.4- t ypical junction capacitance v r , reverse v oltage, (v) 0 c j , j u n c t i o n c a p a c i t a n c e , ( p f ) 3 5 0 0 . 0 1 1 0 0 2 0 0 1 5 0 1 5 0 3 0 0 0 . 1 1 0 1 0 0 2 5 0 fig.5- t ypical reverse characteristics percent of rated peak reverse v oltage, (%) 0 . 0 1 i r , r e v e r s e c u r r e n t , ( m a ) 1 0 0 0 1 4 0 6 0 0 . 1 1 1 0 2 0 4 0 1 2 0 8 0 1 0 0 o t j =25 c o t j =75 c fig.2- t ypical forward characteristics 0 . 0 1 i f , i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) v f , forward v oltage, (v) 0 . 1 1 . 5 1 0 0 0 . 3 0 . 5 0 . 7 1 . 3 0 . 9 1 . 1 0 . 1 1 1 0 o t j =25 c pulse width 300 s 1% duty cycle c d b f n 1 6 0 - h f c d b f n 1 4 0 - h f c d b f n 1 6 0 - h f c d b f n 1 4 0 - h f
page 3 qw -jb001 polarity smd schottky barrier diode rev :c b c d d d 2 d 1 s o d - 3 2 3 s y m b o l a ( m m ) ( i n c h ) 2 . 4 4 m i n . 1 . 4 7 0 . 1 0 2 . 9 5 0 . 1 0 4 . 0 0 0 . 1 0 1 . 5 0 0 . 1 0 3 . 5 0 0 . 1 0 1 . 7 5 0 . 1 0 6 2 . 0 m i n . 1 3 . 0 0 . 5 0 1 . 1 5 0 . 1 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 8 . 0 0 0 . 3 0 1 1 . 4 0 . 0 4 1 7 8 1 0 . 1 1 6 0 . 0 0 4 0 . 0 5 7 0 . 0 0 4 0 . 0 4 5 0 . 0 0 4 0 . 0 5 9 0 . 0 0 4 7 . 0 0 8 0 . 0 4 0 0 . 5 1 2 0 . 0 1 9 7 s o d - 3 2 3 s y m b o l ( m m ) ( i n c h ) 0 . 3 1 5 0 . 0 1 2 0 . 1 3 8 0 . 0 0 4 0 . 0 6 9 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 0 . 4 4 9 0 . 0 0 1 6 e f p p 0 p 1 w w 1 reel t aping specification o 1 2 0 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start t c direction of feed i n d e x h o l e d e f b w p p 0 p 1 a d 1 d 2 d w 1
page 4 rev :c comchip t echnology co., l td. smd schottky barrier diode marking code qw -jb001 suggested p ad layout size (inch) 1.500 (mm) 0.059 0.039 0.051 1.000 1.300 sod-323 standard packaging case t ype qty per reel (pcs) 3000 sod-323 reel size (inch) 7 a b c a b c part number marking code xx CDBFN140-HF cdbfn160-hf 14 16 xx=product type marking code
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